Czochralski
英語[编辑]
詞源[编辑]
借自波蘭語 Czochralski，為一姓氏，以發明這一方法的波蘭化學家 Jan Czochralski (1885–1953) 命名。
發音[编辑]
名詞[编辑]
Czochralski (不可數)
- (作定語，化學) Czochralski process之簡寫。
- 1999, Reinhard Krause-Rehberg, Hartmut S. Leipner, “Basics of Positron Annihilation in Semiconductors”, 出自 Positron Annihilation in Semiconductors: Defect Studies (Springer Series in Solid-State Sciences; 127), Berlin: Springer, →ISBN, →ISSN，頁號 104:
- Mascher et al. (1989b) presented a correlated investigation of electron-irradiation-induced divacancies in silicon by positron annihilation, electron paramagnetic resonance (EPR), and infrared absorption. The defects were created by 2-MeV irradiation of Czochralski-grown Si at room temperature to a dose of 1×1018 cm–2.
- （請為本引文添加中文翻譯）
- 2011, Basant Agrawal, G. N. Tiwari, “Life Cycle Energy Analysis”, 出自 Building Integrated Photovoltaic Thermal Systems: For Sustainable Developments (RSC Energy Series; 4), Cambridge: RSC Publishing, →ISBN, →ISSN，頁號 284:
- The energy required to produce electronic grade silicon (EG-Si) from MG-Si is 100 kWh kg–1 and there is a 90% yield. The EG-Si is melted in a Czochralski crystal puller at 1400 °C and the silicon slowly crystallizes to form a single crystal ingot of silicon.
- （請為本引文添加中文翻譯）
近義詞[编辑]
相關詞彙[编辑]
波蘭語[编辑]
詞源[编辑]
發音[编辑]
專有名詞[编辑]
Czochralski m 個人 (陰性形式 Czochralska)
- 男性姓氏
變格[编辑]
Czochralski的變格
| 單數 | 複數 | |
|---|---|---|
| 主格 | Czochralski | Czochralscy |
| 屬格 | Czochralskiego | Czochralskich |
| 與格 | Czochralskiemu | Czochralskim |
| 賓格 | Czochralskiego | Czochralskich |
| 工具格 | Czochralskim | Czochralskimi |
| 方位格 | Czochralskim | Czochralskich |
| 呼格 | Czochralski | Czochralscy |